Login
 Forum
 
 
Personal data sheet
 Print preview
personal data approved: 2016. IX. 15.
Personal data
Zsolt József Horváth
name Zsolt József Horváth
year of birth 1949
name of institution
Universitas Budensis
Doctoral Council of the University
doctoral school
BME Doctoral School of Physics (Academic staff member)
OE Doctoral School on Materials Science and Technologies (Core member)
Council of the Doctoral School
the share of work in the different doctoral schools. BME Doctoral School of Physics 17%
OE Doctoral School on Materials Science and Technologies 81%
OE DS-ATDI-OE Council of the Doctoral School 1%
OE Doctoral Council of the University 1%
accreditation statement submitted to: Universitas Budensis
HAC accreditation
full compliance
(2012. II. 29.)
Contact details
E-mail address horvzsjmfa.kfki.hu
phone number +36 1 666-5145
own web page
Academic title
scientific degree, title Ph.D.
year degree was obtained 1994
discipline to which degree belongs electrical engineering
institution granting the degree Budapesti Műszaki Egyetem (to be translated)
scientific degree, title CSc
year degree was obtained 1994
discipline to which degree belongs electrical engineering
institution granting the degree HAS
scientific degree, title DSc
year degree was obtained 2009
discipline to which degree belongs electrical engineering
institution granting the degree HAS
Employment
1998 - Universitas Budensis
university professor or researcher
Thesis topic supervisor
number of doctoral students supervised until now 3
number of students who fulfilled course requirements 1
students who obtained their degrees:
Péter Basa PhD 2009  DSP1-BME

  Thesis topic proposals
Research
research area Physics and technology of semiconductor materials, structures, and devices.
research field in which current research is conducted electrical engineering
material sciences
Publications
2014

L Dobos, B Pécz, L Tóth, Zs J Horváth, Z E Horváth, A L Tóth, M -A Poisson: Annealed Ti/Cr/Al contacts on n-GaN, VACUUM 100: pp. 46-49.
type of document: Journal paper/Article
number of independent citations: 1
language: English
DOI 
2014

Horváth Zs J: Threshold//Flat-Band Voltage Hysteresis of Non-Volatile Semiconductor Memory Devices, In: Szerk.: Jose Carlos Dias Hysteresis: Types, Applications and Behavior Patterns in Complex Systems. New York: Nova Science Publishers, 2014. pp. 187-214. (Materials Science and Technologies)
type of document: Part of book/Könyvfejezet (to be translated)
language: English
2013

Horváth ZsJ, Basa P, Molnár KZ, Jászi T, Pap AE, Molnár Gy, Dobos L, Tóth L, Pécz B: Charging Behaviour of Metal-Nitride-Oxide-Semiconductor Memory Structures with Embedded Si or Ge Nanocrystals, NANOSCIENCE AND NANOTECHNOLOGY LETTERS 5: (4) pp. 513-517.
type of document: Journal paper/Article
number of independent citations: 1
language: English
URL 
2013

Horváth ZsJ, Basa P, Jászi T, Molnár KZ, Pap AE, Molnár Gy: Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals, APPLIED SURFACE SCIENCE 269: pp. 23-28.
type of document: Journal paper/Article
number of independent citations: 2
language: English
URL 
2013

Horváth ZsJ, Basa P, Molnár KZ, Molnár Gy, Jászi T, Pap AE: Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures., PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 51: pp. 104-110.
type of document: Journal paper/Article
number of independent citations: 5
language: English
URL 
2005

Ayyildiz E, Cetin H, Horváth ZJ: Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes, APPLIED SURFACE SCIENCE 252: (4) pp. 1153-1158.
type of document: Journal paper/Article
number of independent citations: 43
language: English
DOI 
2004

Osvald J, Horvath ZJ: Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer, APPLIED SURFACE SCIENCE 234: (1-4) pp. 349-354.
type of document: Journal paper/Article
number of independent citations: 76
language: English
DOI 
1996

Horváth ZJ: Comment on "Analysis of I-V measurements on CrSi2-Si Schottky structures in a wide temperature range", SOLID-STATE ELECTRONICS 39: (1) pp. 176-178.
type of document: Journal paper/Article
number of independent citations: 88
language: English
DOI 
1995

HORVATH ZJ: LATERAL DISTRIBUTION OF SCHOTTKY-BARRIER HEIGHT - A THEORETICAL APPROACH, VACUUM 46: (8-10) pp. 963-966.
type of document: Journal paper/Article
number of independent citations: 25
language: English
1988

HORVATH ZJ: DOMINATION OF THE THERMIONIC-FIELD EMISSION IN THE REVERSE IV CHARACTERISTICS OF N-TYPE GAAS SCHOTTKY CONTACTS, JOURNAL OF APPLIED PHYSICS 64: (12) pp. 6780-6784.
type of document: Journal paper/Article
number of independent citations: 18
language: English
Number of independent citations to these publications:259 
Scientometric data
list of publications and citations
number of scientific publications that meet accreditation criteria:
236
number of scientific publications:
271
monographs and professional books:
0
monographs/books in which chapters/sections were contributed:
3 
scientific publications published abroad that meet the accreditation criteria:
199
publications not in Hungarian, published in Hungary, meeting the accreditation criteria:
27
number of independent citations to scientific publications and creative works:
823

 
All rights reserved © 2007, Hungarian Doctoral Council. Doctoral Council registration number at commissioner for data protection: 02003/0001. Program version: 1.2318 ( 2016. XI. 26. )